L. Witkowski

Measurements of hot-electron conduction and real-space transfer in GaAs-Al<i>x</i>Ga1−<i>x</i>As heterojunction layers

M. Keever, H. Shichijo, K. Hess et al. · Applied Physics Letters · 1981 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of AlGaN/GaN HEMT structure on RF reliability

C. Lee, L. Witkowski, H.Q. Tserng et al. · Electronics Letters · 2005 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

High mobilities in Al<i>x</i>Ga1−<i>x</i>As-GaAs heterojuntions

L. Witkowski, T. J. Drummond, C.M. Stanchak et al. · Applied Physics Letters · 1980 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Growth conditions to achieve mobility enhancement in Al _x Ga _1−x As-GaAs heterojunctions by m.b.e.

H. Morkoç, L. Witkowski, T. J. Drummond et al. · Electronics Letters · 1980 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

250 W HVHBT Doherty With 57% WCDMA Efficiency Linearized to ${-}$55 dBc for 2c11 6.5 dB PAR

Craig Steinbeiser, Thomas Landon, C.W. Suckling et al. · IEEE Journal of Solid-State Circuits · 2008 · 41 citations

Engineering, Electrical Engineering, Microelectronics +16