Electronics Letters · 1980 · 42 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesDoping Effects On Device PerformanceHeterojunctionsHeterostructure DevicesMobility EnhancementModulation DopingMolecular Beam EpitaxySemiconductor HeterojunctionsTransport In Heterostructures
Modulation doped Al0.25Ga0.75As-GaAs heterojunctions have been prepared by molecular beam epitaxy (m.b.e.). Al0.25Ga0.75As layers were doped with Si to a level of ∼ 3 × 1017 cm−3, whereas the GaAs layers were either unintentionally doped, doped lightly n-type with Sn, or doped lightly p-type with Be. Heterojunction structures having single and multiple periods have shown enhanced mobility only with the AlxGa1−xAs layer at the surface and the GaAs layer underlying. These results represent the first report that electrons spill over only into the underlying GaAs layer from the top AlxGa1−xAs layer.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations