Electronics Letters · 2004 · 17 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-frequency ElectronicsLow-noise Microwave TransistorsMicrowave DevicesMicrowave Noise CharacterizationMicrowave TransistorsNoise CharacteristicsNoise FigureNoise In High-frequency Semiconductor Devices
High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 µm gate-length have been fabricated on semi-insulating 6H‐SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and maximum frequency of oscillation (fMAX) of 112 GHz. At 10 GHz, a minimum noise figure (NFmin) of 0.75 dB and an associated gain (Ga) of 10.84 dB was obtained when biased at VDS=10 V and IDS=40.6 mA/mm. The corresponding values were 1.15 and 7.49 dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25 µm gate-length GaN HEMTs on 6H‐SiC substrates. The use of 6H‐SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.
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State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
C. Lee, H. Wang, Jinwei Yang et al. · Electronics Letters · 2002 · 34 citations