M. Wójtowicz - Concepedia

Author

M. Wójtowicz

Northrop Grumman (United States)

Also Known As

M Wojtowicz, M. Wojtowicz, M. Wójtowicz, Michael Wojtowicz, Wojtowicz, Michael (author), Wójtowicz, Małgorzata

100

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Redondo Optics (United States)University of California, Los Angeles City University of New York University of South Carolina

About

M. Wójtowicz is an author at Northrop Grumman (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	36	1K
2	Electrical Engineering	19	33	960
3	Applied Physics	17	28	666
4	Materials Engineering	4	4	135
5	Education	1	1	90

M. Wójtowicz

Publications

Citations

H-Index

Page 1

	Year	Citations
0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/ M. Wójtowicz, R. Lai, D.C. Streit, IEEE Electron Device Letters Ghz F/sub Max/EngineeringChannel ThicknessRadio FrequencyMeasurement	1994	90
Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting Y.C. Chou, D. Leung, Ioulia Smorchkova, Microelectronics Reliability Materials EngineeringElectrical EngineeringEngineeringCorrosionApplied Physics	2004	83
A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier Mingqi Chen, William Sutton, Ioulia Smorchkova, IEEE Microwave and Wireless Components Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorShunt Feedback Loop	2010	67
Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers Shih-En Shih, W.R. Deal, Daisuke Yamauchi, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorDb Flat GainElectrical EngineeringEngineeringRf Semiconductor	2009	54
Two-dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum well structure Yichun Yin, Hao Qiang, Fred H. Pollak, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsElectrical EngineeringEngineeringPhysics	1992	53
Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT R. Lai, M. Wójtowicz, Chunhua Chen, IEEE Microwave and Guided Wave Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	1993	49
Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics M. Aust, Arvind Kumar Sharma, Yaochung Chen, Survivable WidebandNovel AmplifierElectrical EngineeringWideband PerformanceEngineering	2006	46
Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs Y.C. Chou, R. Grundbacher, D. Leung, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2004	35
AlGaN/GaN HEMTs---operation in the K-band and above Ioulia Smorchkova, M. Wójtowicz, Rajinder Sandhu, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Power	2003	34
Investigation of flicker noise and deep-levels in GaN/AlGaN transistors Alexander A. Balandin, K. L. Wang, Shiwei Cai, Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideNoise	2000	33

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