IEEE Transactions on Microwave Theory and Techniques · 2003 · 34 citations · 11 references
Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency PowerElectronic EngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceAlgan/gan HemtsPower ElectronicsCategoryiii-v SemiconductorNoise Performance
Reports on the power and microwave noise performance of AlGaN/GaN high electron-mobility transistors (HEMTs) at frequencies f>18 GHz (K- and Ka-bands). At 20 GHz, a record continuous-wave output power of 1.6 W has been achieved on an eight-finger 500-/spl mu/m total gate-periphery device. At 29 GHz, a 120-/spl mu/m gate-periphery device showed a pulsed output density of 1.6 W/mm with an associated gain of 6.7 dB and power-added efficiency of 26%. Minimum noise figure of 1.5 dB has been achieved on a 0.2 /spl mu/m /spl times/ 200 /spl mu/m device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and low-noise amplifier applications.
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Very-high power density AlGaN/GaN HEMTs
Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 549 citations
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 225 citations
Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +11