R.M. Dia

0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

M. Wójtowicz, R. Lai, D.C. Streit et al. · IEEE Electron Device Letters · 1994 · 90 citations

Ghz F/sub Max/, Engineering, Channel Thickness +16

94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 88 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

High-gain W band pseudomorphic InGaAs power HEMTs

D.C. Streit, K.L. Tan, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 66 citations

Record Power, Electrical Engineering, Engineering +11

High-power V-band pseudomorphic InGaAs HEMT

K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations

Electrical Engineering, Semiconductor Device, Engineering +11

A 140-GHz monolithic low noise amplifier

H. Wang, R. Lai, D.C.W. Lo et al. · IEEE Microwave and Guided Wave Letters · 1995 · 56 citations

138-145 Ghz, Electrical Engineering, Millimeter Wave Technology +9