94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

Abstract

Fabrication of state-of-the-art W-band 0.1- mu m T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) is reported. This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an F/sub max/ of 290 GHz. This noise figure is claimed to be the lowest ever reported for HEMTs fabricated on GaAs substrates at this frequency range.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>