T.S. Lin - Concepedia

Author

T.S. Lin

Redondo Optics (United States)

Also Known As

T. Lin, T.S. Lin, Takyiu Lin

Publications

469

Citations

H-Index

Concepts

All Affiliations

Redondo Optics (United States)

About

T.S. Lin is an author at Redondo Optics (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	434
2	Electrical Engineering	9	9	416
3	Applied Physics	6	6	279
4	Antenna	3	3	187
5	Computer Engineering	1	1	18

T.S. Lin

Publications

434

Citations

H-Index

Page 1

	Year	Citations
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1990	88
High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology H. Wang, G.S. Dow, B.R. Allen, IEEE Transactions on Microwave Theory and Techniques EngineeringDesign/analysis MethodologyElectromagnetic CompatibilityRf SemiconductorElectronic Engineering	1992	75
Broadband monolithic passive baluns and monolithic double-balanced mixer T.-h. Chen, K. Chang, S. Bui, IEEE Transactions on Microwave Theory and Techniques Ms MarchandElectrical EngineeringMultilayer Ms MarchandEngineeringRadio Frequency	1991	69
60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringMillimeter Wave TechnologyIngaas Channel	1991	49
A W-band monolithic downconverter K.W. Chang, H. Wang, S. Bui, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1991	43
Ultralow-noise W-band pseudomorphic InGaAs HEMT's K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters Semiconductor TechnologyPm Ingaas HemtsElectrical EngineeringSemiconductor DeviceEngineering	1990	30
A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers M. Biedenbender, J.L. Lee, K.L. Tan, Electrical EngineeringMillimeter Wave TechnologyDb GainEngineeringRf Semiconductor	2002	25
Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs M.W. Pospieszalski, W.J. Lakatosh, L.D. Nguyen, Radio Astronomy ApplicationsElectrical Engineering40-50 Ghz AmplifierEngineeringRadio Frequency	2002	19
A high performance W-band monolithic pseudomorphic InGaAs HEMT LNA H. Wang, G.S. Dow, K. H. Tan, Microwave CircuitsElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2002	18
An X-band monolithic double-balanced mixer for high dynamic receiver application T.N. Ton, G.S. Dow, T.H. Chen, EngineeringRadio FrequencyHigh-frequency DeviceMixed-signal Integrated CircuitComputer Engineering	2002	18

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