H.C. Yen - Concepedia

Author

H.C. Yen

Redondo Optics (United States)

Also Known As

H. C. Yen, H. Yen, H.C. Yen, Huan-Chun Yen

Publications

980

Citations

H-Index

Concepts

All Affiliations

Redondo Optics (United States)Wright-Patterson Air Force Base California Institute of Technology HRL Laboratories (United States)

About

H.C. Yen is an author at Redondo Optics (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	32	872
2	Electrical Engineering	17	29	792
3	Applied Physics	12	15	471
4	Computer Engineering	1	1	13
5	Materials Engineering	1	1	16

H.C. Yen

Publications

872

Citations

H-Index

Page 1

	Year	Citations
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1990	88
High-gain W band pseudomorphic InGaAs power HEMTs D.C. Streit, K.L. Tan, R.M. Dia, IEEE Electron Device Letters Record PowerElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	1991	66
A 95-GHz InP HEMT MMIC amplifier with 427-mW power output Y.C. Chen, D. L. Ingram, R. Lai, IEEE Microwave and Guided Wave Letters Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorPower Amplifier	1998	63
A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier D. L. Ingram, Y.C. Chen, Johannes Kraus, Electrical EngineeringEngineeringRf SemiconductorPower AmplifierInp Amplifier	2003	52
60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringMillimeter Wave TechnologyIngaas Channel	1991	49
Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT R. Lai, M. Wójtowicz, Chunhua Chen, IEEE Microwave and Guided Wave Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	1993	49
GaAs GaAlAs double-heterostructure injection lasers with distributed feedback M. Nakamura, K. Aiki, J. Umeda, IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLaser ScienceHigh-power Laser TechnologyLaser Physics	1975	34
Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links H. Blauvelt, G. D. Thurmond, J. D. Parsons, Applied Physics Letters Optical MaterialsEngineeringOptical Transmission SystemFiber OpticsFiber-optic Communication	1984	32
Ultralow-noise W-band pseudomorphic InGaAs HEMT's K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters Semiconductor TechnologyPm Ingaas HemtsElectrical EngineeringSemiconductor DeviceEngineering	1990	30
44 GHz Monolithic Low Noise Amplifier J. Berenz, H.C. Yen, R. Esfandiari, Chip SizeDb GainEngineeringSingle-stage 44High-frequency Device	1987	30

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