High-gain W band pseudomorphic InGaAs power HEMTs

Abstract

The authors have fabricated 0.1- mu m T-gate pseudomorphic (PM) InGaAs power high-electron-mobility transistors (HEMTs) with record power and gain performance at 94 GHz. Devices with 40- mu m gate peripheries achieved 10.6-mW output power with 7.3-dB gain and 14.3% power-added efficiency (PAE). Devices with 160- mu m gate peripheries achieved 62.7-mW output power with 4.0-dB gain and 13.2% PAE. The authors believe the superior performance of these devices is due to the combination of a short 0.1- mu m T-gate, high-quality material, optimized device profile, and the reduction in source inductance due to source vias.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>