IEEE Electron Device Letters · 1991 · 66 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresCarrier Material QualityGainHigh-electron-mobility TransistorsHigh-frequency ElectronicsHigh-gain AmplifiersMicrowave TransistorsPower OutputPower Output Capability
The authors have fabricated 0.1- mu m T-gate pseudomorphic (PM) InGaAs power high-electron-mobility transistors (HEMTs) with record power and gain performance at 94 GHz. Devices with 40- mu m gate peripheries achieved 10.6-mW output power with 7.3-dB gain and 14.3% power-added efficiency (PAE). Devices with 160- mu m gate peripheries achieved 62.7-mW output power with 4.0-dB gain and 13.2% PAE. The authors believe the superior performance of these devices is due to the combination of a short 0.1- mu m T-gate, high-quality material, optimized device profile, and the reduction in source inductance due to source vias.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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InGaAs pseudomorphic HEMTs for millimeter wave power applications
P.M. Smith, P.C. Chao, L. F. Lester et al. · 2003 · 40 citations
Ultralow-noise W-band pseudomorphic InGaAs HEMT's
K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 30 citations