J.R. Velebir

High-gain W band pseudomorphic InGaAs power HEMTs

D.C. Streit, K.L. Tan, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 66 citations

Record Power, Electrical Engineering, Engineering +11

High-power V-band pseudomorphic InGaAs HEMT

K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme

L. C. Wang, S. S. Lau, Eric Hsieh et al. · Applied Physics Letters · 1989 · 58 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

D.C. Streit, A.K. Oki, D.K. Umemoto et al. · IEEE Electron Device Letters · 1991 · 53 citations

Semiconductors, Materials Science, Electrical Engineering +15

Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

M.W. Pospieszalski, W.J. Lakatosh, R. Lai et al. · 2002 · 52 citations

Electrical Engineering, Engineering, Rf Semiconductor +13