J.R. Velebir - Concepedia

Author

J.R. Velebir

Redondo Optics (United States)

Also Known As

J. R. Velebir, J. Velebir, J.R. Velebir, James R. Velebir

Publications

756

Citations

H-Index

Concepts

All Affiliations

Redondo Optics (United States)AT&T (United States)National Radio Astronomy Observatory

About

J.R. Velebir is an author at Redondo Optics (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	27	701
2	Electrical Engineering	16	25	653
3	Applied Physics	15	19	545
4	Physics	2	2	67
5	Materials Science	1	1	53

J.R. Velebir

Publications

715

Citations

H-Index

Page 1

	Year	Citations
High-gain W band pseudomorphic InGaAs power HEMTs D.C. Streit, K.L. Tan, R.M. Dia, IEEE Electron Device Letters Record PowerElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	1991	66
High-power V-band pseudomorphic InGaAs HEMT K.L. Tan, D.C. Streit, R.M. Dia, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorElectronic Engineering	1991	61
Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme L. C. Wang, S. S. Lau, Eric Hsieh, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1989	58
High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts D.C. Streit, A.K. Oki, D.K. Umemoto, IEEE Electron Device Letters SemiconductorsMaterials ScienceElectrical EngineeringHigh-reliability Gaas-algaas HbtsEngineering	1991	53
Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs M.W. Pospieszalski, W.J. Lakatosh, R. Lai, Electrical EngineeringEngineeringRf SemiconductorPhysicsAlinas/gainas/inp Hemts	2002	52
Ultralow-noise W-band pseudomorphic InGaAs HEMT's K.L. Tan, R.M. Dia, D.C. Streit, IEEE Electron Device Letters Semiconductor TechnologyPm Ingaas HemtsElectrical EngineeringSemiconductor DeviceEngineering	1990	30
InP based HBT millimeter-wave technology and circuit performance to 40 GHz K.W. Kobayashi, L.T. Tran, S. Bui, Electrical EngineeringMillimeter Wave TechnologyHbt Millimeter-wave TechnologyEngineeringOscillators	2002	30
44 GHz Monolithic Low Noise Amplifier J. Berenz, H.C. Yen, R. Esfandiari, Chip SizeDb GainEngineeringSingle-stage 44High-frequency Device	1987	30
A high-performance monolithic Q-band InP-based HEMT low-noise amplifier D.C.W. Lo, R. Lai, H. Wang, IEEE Microwave and Guided Wave Letters Inp-based Pseudomorphic HemtsElectrical EngineeringEngineeringRf SemiconductorUltra-low-power Consumption	1993	28
Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads K.W. Kobayashi, D.K. Umemoto, J.R. Velebir, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringRf SemiconductorDarlington AmplifiersComplementary Hbt	1993	24

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