S. S. Lau - Concepedia

Author

S. S. Lau

University of California San Diego

Also Known As

Lau, Sze-Cheung, S S Lau, S S. Lau, S. Lau, S. S lau, S. S. Lau, S.S Lau, S.S. LAU, S.S. Lau, Sean Shao Zuen Lau

222

Publications

5.7K

Citations

H-Index

104

Concepts

All Affiliations

University of California San Diego California Institute of Technology Arizona State University Oak Ridge National Laboratory Cornell University

About

S. S. Lau is an author at University of California San Diego specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	43	112	5.1K
2	Engineering	42	115	5.1K
3	Natural Sciences	6	6	229
4	Education	1	1	153
5	Biomedical Engineering	1	1	26

S. S. Lau

119

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures J. W. Mayer, B-Y. Tsaur, S. S. Lau, Nuclear Instruments and Methods Materials ScienceIon ImplantationEngineeringApplied PhysicsIon Beam	1981	297
Nonalloyed ohmic contacts to <i>n</i>-GaAs by solid-phase epitaxy of Ge E. D. Marshall, B. Zhang, L. C. Wang, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPdge FormationEngineering	1987	206
Salicidation process using NiSi and its device application F. Deng, Rob Johnson, P.M. Asbeck, Journal of Applied Physics EngineeringEducationOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	1997	153
Kinetics of TiSi2 formation by thin Ti films on Si L. S. Hung, J. Gyulai, J. W. Mayer, Journal of Applied Physics EngineeringSilicon On InsulatorTisi2 FormationSiliceneSilicide Formation	1983	152
Continuous series of metastable Ag-Cu solid solutions formed by ion-beam mixing B-Y. Tsaur, S. S. Lau, J. W. Mayer Applied Physics Letters Materials ScienceContinuous SeriesIon ImplantationEngineeringPhysics	1980	136
Compensating impurity effect on epitaxial regrowth rate of amorphized Si I. Suni, G. Göltz, M. G. Grimaldi, Applied Physics Letters Materials ScienceSemiconductorsIon ImplantationImpurity EffectEngineering	1982	128
Non-alloyed ohmic contact to <i>n</i>-GaAs by solid phase epitaxy E. D. Marshall, W. X. Chen, C. S. Wu, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1985	112
Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium I. Suni, G. Göltz, M‐A. Nicolet, Thin Solid Films Amorphized SiliconPhysicsIntrinsic ImpurityApplied PhysicsSemiconductor Device Fabrication	1982	107
Amorphous film formation by ion mixing in binary metal systems Baixin Liu, William L. Johnson, M.−A. Nicolet, Nuclear Instruments and Methods in Physics Research Materials ScienceIon MixingEngineeringPhysicsApplied Physics	1983	104
Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates L. S. Yu, D. Qiao, S. S. Lau, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1998	98

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