IEEE Microwave and Guided Wave Letters · 1998 · 63 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power AmplifiersHigh-efficiency Power AmplifiersMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit AmplifiersMonolithic Microwave Integrated CircuitsPower Amplifier DesignPower Output
We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-μm gate length and 1.28-mm output periphery fabricated using this process has demonstrated an output power of 427 mW with 19% power-added efficiency at 95 GHz. To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier.
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A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
K.H.G. Duh, P.C. Chao, S.M.J. Liu et al. · IEEE Microwave and Guided Wave Letters · 1991 · 135 citations
High-gain W band pseudomorphic InGaAs power HEMTs
D.C. Streit, K.L. Tan, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 66 citations
A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier