B. Peres

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Design of edge termination for GaN power Schottky diodes

J. R. LaRoche, F. Ren, K. W. Baik et al. · Journal of Electronic Materials · 2005 · 42 citations

Engineering, Electrical Engineering, Materials Science +11

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

B. Luo, F. Ren, Robert Fitch et al. · Applied Physics Letters · 2003 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates

Young Chul Choi, M. Pophristić, B. Peres et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

Young Chul Choi, M. Pophristić, B. Peres et al. · Semiconductor Science and Technology · 2007 · 27 citations

Engineering, Electrical Engineering, Materials Science +15