M. Pophristić - Concepedia

Author

M. Pophristić

University of the Sciences

Also Known As

M Pophristic, M. POPHRISTIC, M. Pophristic, M. Pophristić, Milan Pophristic

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

University of the Sciences Rutgers, The State University of New Jersey MSTM (United States)Cornell University Emcore (United States)

About

M. Pophristić is an author at University of the Sciences specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	26	1.2K
2	Applied Physics	18	24	1.2K
3	Medicine	4	4	93
4	Natural Sciences	3	3	67
5	Biochemistry	2	2	42

M. Pophristić

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Spatial characterization of doped SiC wafers by Raman spectroscopy J. C. Burton, Luanhong Sun, M. Pophristić, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyOptical MaterialsLo Phonon–plasmon Mode	1998	213
Single-crystal aluminum nitride nanomechanical resonators A. N. Cleland, M. Pophristić, Ian T. Ferguson Applied Physics Letters Aluminium NitrideEngineeringAcoustic MetamaterialMechanical EngineeringAluminum Nitride	2001	155
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate Young Chul Choi, M. Pophristić, Ho‐Young Cha, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringFe-doped Gan BufferEngineeringNanoelectronics	2006	107
High performance AlGaN/GaN power switch with HfO2 insulation Junxia Shi, L.F. Eastman, Xiaobin Xin, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringField Plates	2009	85
Time-resolved photoluminescence measurements of InGaN light-emitting diodes M. Pophristić, Frederick H. Long, C. A. Tran, Applied Physics Letters EngineeringStretched Exponential KineticsOptoelectronic DevicesTime-resolved Photoluminescence MeasurementsSemiconductors	1998	77
Ion-beam-produced damage and its stability in AlN films S. O. Kucheyev, J. S. Williams, Jin Zou, Journal of Applied Physics Materials ScienceMaterials EngineeringAln FilmsIon ImplantationEngineering	2002	67
Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes M. Pophristić, Frederick H. Long, C. A. Tran, Journal of Applied Physics EngineeringOptoelectronic DevicesTime-resolved Photoluminescence MeasurementsLuminescence PropertyEmission Energy	1999	50
Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire M. Pophristić, Frederick H. Long, M. Schurman, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorRaman MicroscopyEngineeringPhysics	1999	49
Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature M. Pophristić, Frederick H. Long, C. A. Tran, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsRoom TemperatureSolid-state LightingEngineering	1998	42
Structural disorder in ion-implanted AlxGa1−xN S. O. Kucheyev, J. S. Williams, Jin Zou, Applied Physics Letters Materials ScienceMaterials EngineeringIon ImplantationAluminium NitrideEngineering	2002	42

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