C. A. Tran

Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

C. A. Tran, A. Osinski, R. F. Karlicek et al. · Applied Physics Letters · 1999 · 167 citations

Electrical Engineering, Solid-state Lighting, Engineering +12

Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

W. Grieshaber, E. Fred Schubert, I. D. Goepfert et al. · Journal of Applied Physics · 1996 · 129 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition

X. Ni, Ü. Özgür, A. A. Baski et al. · Applied Physics Letters · 2007 · 89 citations

Wide-bandgap Semiconductor, Engineering, M-plane Sapphire +16

Time-resolved photoluminescence measurements of InGaN light-emitting diodes

M. Pophristić, Frederick H. Long, C. A. Tran et al. · Applied Physics Letters · 1998 · 77 citations

Engineering, Stretched Exponential Kinetics, Optoelectronic Devices +16

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

C. A. Tran, R. F. Karlicek, M. Schurman et al. · Journal of Crystal Growth · 1998 · 65 citations

Photonics, Solid-state Lighting, Engineering +9