X. Ni - Concepedia

Author

X. Ni

Virginia Commonwealth University ORCID

Also Known As

Ni, Xiaodi, X Ni, X. F. Ni, X. Ni, X.F. Ni, Xiangran Ni, Xiaodi Ni, Xindong Ni

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Virginia Commonwealth University Kyma Technologies (United States)University of Michigan Arizona State University U.S. Army Space and Missile Defense Command

About

X. Ni is an author at Virginia Commonwealth University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	29	1.2K
2	Applied Physics	21	30	1.2K
3	Electrical Engineering	19	25	1K
4	Materials Science	9	9	387
5	Materials Engineering	4	4	277

X. Ni

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Optimization of a-plane GaN growth by MOCVD on r-plane sapphire X. Ni, Y. Fu, Y. T. Moon, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringA-plane Gan Growth	2006	136
Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition X. Ni, Ü. Özgür, A. A. Baski, Applied Physics Letters Wide-bandgap SemiconductorEngineeringM-plane SapphireMask Orientation XrdGan Films	2007	89
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X. Ni, Xin‐Ge Li, J. Lee, Applied Physics Letters SemiconductorsWhite OledElectrical EngineeringElectronic DevicesQuasiballistic Electron Transport	2010	88
Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy Serguei Chevtchenko, X. Ni, Q. Fan, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSurface Band BendingEngineering	2006	66
Study of SiNx and SiO2 passivation of GaN surfaces Serguei Chevtchenko, M. A. Reshchikov, Qi Fan, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsSio2 PassivationEngineering	2007	63
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them X. Ni, X. Li, J. Lee, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringEnergy EfficiencyIngan LedsSemiconductor Device	2010	59
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes Xianbo LI, X. Ni, Joon Chok Lee, Applied Physics Letters EngineeringOptoelectronic DevicesReference C-plane LedsSemiconductorsElectronic Devices	2009	58
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork Jinqiao Xie, Ü. Özgür, Y. Fu, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSignificant ImprovementSemiconductorsSitu Sinx Nanonetwork	2007	55
Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth X. Ni, Ümit Özgür, Yang Ming Fu, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2006	55
Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Jun Xie, Jacob H. Leach, X. Ni, Applied Physics Letters SemiconductorsDifferent BarriersElectrical EngineeringElectronic DevicesEngineering	2007	45

Page 1