Effect of the AIN nucleation layer growth on AlN material quality

Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Balakrishnan, Tom Katona · Nature Photonics · 2008 · 1K citations

Solid-state Lighting, Engineering, Applied Physics +4

Mosaic structure in epitaxial thin films having large lattice mismatch

V. Srikant, James S. Speck, David R. Clarke · Journal of Applied Physics · 1997 · 445 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

M. Asif Khan, J. N. Kuznia, R. A. Skogman et al. · Applied Physics Letters · 1992 · 113 citations

Materials Science, Materials Engineering, Aluminium Nitride +15

Effect of nitridation on polarity, microstructure, and morphology of AlN films

Yuan Wu, Amy Hanlon, John F. Kaeding et al. · Applied Physics Letters · 2004 · 93 citations

Materials Science, Materials Engineering, Aln Films +14