Ultraviolet light-emitting diodes based on group three nitrides

Spontaneous polarization and piezoelectric constants of III-V nitrides

Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt · Physical review. B, Condensed matter · 1997 · 3K citations · Full text

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

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