H. Heinke

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 387 citations

Materials Science, Dislocation Densities, Aluminium Nitride +12

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

The role of high-temperature island coalescence in the development of stresses in GaN films

T. Böttcher, S. Einfeldt, S. Figge et al. · Applied Physics Letters · 2001 · 191 citations

Wide-bandgap Semiconductor, Engineering, Residual Stress +16

Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

A. Waag, H. Heinke, Stephan Scholl et al. · Journal of Crystal Growth · 1993 · 128 citations

Materials Science, Materials Engineering, Engineering +9

Strain relaxation in AlGaN under tensile plane stress

S. Einfeldt, V. Kirchner, H. Heinke et al. · Journal of Applied Physics · 2000 · 127 citations · Full text

Engineering, Aluminum Content, Layer Thickness +17