T. Böttcher

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 391 citations

Natural Sciences, Materials Engineering, Materials Science +17

The role of high-temperature island coalescence in the development of stresses in GaN films

T. Böttcher, S. Einfeldt, S. Figge et al. · Applied Physics Letters · 2001 · 191 citations

Natural Sciences, Materials Engineering, Materials Science +17

In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

S. Figge, T. Böttcher, S. Einfeldt et al. · Journal of Crystal Growth · 2000 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +17

Incorporation of indium during molecular beam epitaxy of InGaN

T. Böttcher, S. Einfeldt, V. Kirchner et al. · Applied Physics Letters · 1998 · 93 citations

Engineering, Materials Engineering, Materials Science +17

Magnesium segregation and the formation of pyramidal defects in <i>p</i>-GaN

S. Figge, Roland Kröger, T. Böttcher et al. · Applied Physics Letters · 2002 · 61 citations

Engineering, Materials Engineering, Materials Science +15