S. Einfeldt

Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 668 citations

White Oled, Ultraviolet Light, Electrical Engineering +10

The 2020 UV emitter roadmap

Hiroshi Amano, Ramón Collazo, Carlo De Santi et al. · Journal of Physics D Applied Physics · 2020 · 489 citations · Full text

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 387 citations

Materials Science, Dislocation Densities, Aluminium Nitride +12

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

Free-carrier and phonon properties of<i>n</i>- and<i>p</i>-type hexagonal GaN films measured by infrared ellipsometry

A. Kasic, M. Schubert, S. Einfeldt et al. · Physical review. B, Condensed matter · 2000 · 256 citations

-Gan Films, Infrared Spectroscopic Ellipsometry, Wide-bandgap Semiconductor +20