X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt, +1

Applied Physics Letters

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorSemiconductor TechnologyEngineering +12

Strain relaxation in AlGaN under tensile plane stress

S. Einfeldt, V. Kirchner, H. Heinke, +4

Journal of Applied Physics

EngineeringAluminum ContentLayer ThicknessStressstrain AnalysisMicrostructure-strength Relationship +15

Incorporation of indium during molecular beam epitaxy of InGaN

T. Böttcher, S. Einfeldt, V. Kirchner, +5

Applied Physics Letters

Materials ScienceChosen FluxesWide-bandgap SemiconductorEpitaxial GrowthEngineering +10

Analysis of the Defect Structure of Epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt, +1

physica status solidi (a)

Materials ScienceElectrical EngineeringMosaic CrystalsEngineeringDislocation Interaction +11

Strain relaxation in AlGaN/GaN superlattices grown on GaN

S. Einfeldt, H. Heinke, V. Kirchner, +1

Journal of Applied Physics

Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorEngineering +11

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

V. Kirchner, H. Heinke, U. Birkle, +4

Physical review. B, Condensed matter

Materials ScienceWide-bandgap SemiconductorIon ImplantationAluminium NitrideEngineering +13

Thermal expansion of bulk and homoepitaxial GaN

V. Kirchner, H. Heinke, D. Hommel, +2

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorHigh Temperature MaterialsLow TemperaturesPhysics +10

The growth of size-determined Cu clusters in nanometer holes on Au(111) due to a balance between surface and electrochemical energy

Xinhui Xia, Rolf Schuster, V. Kirchner, +1

Journal of Electroanalytical Chemistry

Materials ScienceCluster ScienceNanometer HolesElectrochemical EnergyEngineering +9

Evaluation of ZnO substrates for homoepitaxy

H. Wenisch, V. Kirchner, Soon‐Ku Hong, +3

Journal of Crystal Growth

Materials EngineeringEngineeringZno SubstratesOxide ElectronicsGallium Oxide +2

X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence

H. Heinke, V. Kirchner, H. Selke, +4

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorX-ray SpectroscopyEngineeringOptical PropertiesNanoelectronics +16