O. Reentilä

InAs-Al hybrid devices passing the topological gap protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam et al. · Physical review. B./Physical review. B · 2023 · 185 citations · Full text

Engineering, Topological Materials, Topological Gap Protocol +16

Effect of the AIN nucleation layer growth on AlN material quality

O. Reentilä, Frank Brunner, A. Knauer et al. · Journal of Crystal Growth · 2008 · 79 citations

Materials Science, Materials Engineering, Aluminium Nitride +10

Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

Yun Sun, Ayşe Erol, M. Yılmaz et al. · Optical and Quantum Electronics · 2007 · 16 citations

Optical Materials, Engineering, μM Laser Applications +16

InAs-Al Hybrid Devices Passing the Topological Gap Protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam et al. · arXiv (Cornell University) · 2022 · 15 citations · Full text

Temperature Dependence Of Current-Voltage Characteristics Of Au∕p-GaAsN Schottky Barrier Diodes, With Small N Content

Victor-Tapio Rangel-Kuoppa, O. Reentilä, M. Sopanen et al. · AIP conference proceedings · 2011 · 13 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12