John F. Kaeding

Statistics

Publications

Citations

782

H-Index

Active since

2003

Affiliations

University of California, Santa Barbara(Current)

Tohoku University

Japan Science and Technology Agency

University of Tsukuba

John F. Kaeding is an author at University of California, Santa Barbara specializing in materials science, materials engineering, and electronic materials.

Publications per year

2003–2010

Publications

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

Aurélien David, Michael J. Grundmann, John F. Kaeding et al. · Applied Physics Letters · 2008 · 338 citations

Engineering, Electrical Engineering, Materials Science +17

292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

Amy Hanlon, P. Morgan Pattison, John F. Kaeding et al. · Japanese Journal of Applied Physics · 2003 · 97 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of nitridation on polarity, microstructure, and morphology of AlN films

Yuan Wu, Amy Hanlon, John F. Kaeding et al. · Applied Physics Letters · 2004 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17

Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy

T. Koyama, M. Sugawara, Takuya Hoshi et al. · Applied Physics Letters · 2007 · 77 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Impact of strain on free-exciton resonance energies in wurtzite AlN

Hirokatsu Ikeda, Takahiro Okamura, Kodai Matsukawa et al. · Journal of Applied Physics · 2007 · 51 citations · Full text

Natural Sciences, Materials Science, Physics +17

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