H. Protzmann

Effect of the AIN nucleation layer growth on AlN material quality

O. Reentilä, Frank Brunner, A. Knauer et al. · Journal of Crystal Growth · 2008 · 79 citations

Materials Science, Materials Engineering, Aluminium Nitride +10

High‐temperature growth of AlN in a production scale 11 × 2′ MOVPE reactor

Frank Brunner, H. Protzmann, M. Heuken et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 50 citations

Materials Science, Materials Engineering, Movpe Reactor +15

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

M. Dauelsberg, Conor Martin, H. Protzmann et al. · Journal of Crystal Growth · 2006 · 45 citations

Chemical Engineering, Engineering, Planetary Reactors +8

Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors

G. Zimmermann, H. Protzmann, T. Marschner et al. · Journal of Crystal Growth · 1993 · 24 citations

Semiconductors, Inorganic Chemistry, Materials Science +8

Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis

A. Krost, J. Bläsing, M. Lünenbürger et al. · Applied Physics Letters · 1999 · 23 citations

Wide-bandgap Semiconductor, Engineering, X-ray Reflectivity +17