Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

High-power InGaN/GaN double-heterostructure violet light emitting diodes

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Applied Physics Letters · 1993 · 660 citations

Engineering, Electrical Engineering, Materials Science +16

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 272 citations

Engineering, Materials Engineering, Materials Science +14

A reaction-transport model for AlGaN MOVPE growth

T. G. Mihopoulos, Vijay K. Gupta, Klavs F. Jensen · Journal of Crystal Growth · 1998 · 181 citations

Natural Sciences, Materials Engineering, Materials Science +12

High temperature adduct formation of trimethylgallium and ammonia

A. Thon, T. F. Kuech · Applied Physics Letters · 1996 · 154 citations

Natural Sciences, Chemistry, Materials Science +14

Nature of the parasitic chemistry during AlGaInN OMVPE

J. R. Creighton, George T. Wang, W.G. Breiland et al. · Journal of Crystal Growth · 2003 · 142 citations

Life Sciences, Chemistry, Microbiology +3