Concepedia
Statistics
Publications
5
Citations
179
H-Index
Active since
2004
Affiliations
Aixtron (Germany)(Current)
Thomas Swan (United Kingdom)
Adam R. Boyd is an author at Aixtron (Germany) specializing in materials engineering, engineering, and materials science.
Publications per year
2004–2018
Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD
Adam R. Boyd, Stefan Degroote, Maarten Leys et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 62 citations
Engineering, Materials Engineering, Materials Science +17
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
M. Dauelsberg, Conor Martin, H. Protzmann et al. · Journal of Crystal Growth · 2006 · 45 citations
Engineering, Materials Engineering, Computational Heat Transfer +13
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
B.S. Zhang, Mei‐Lin Wu, J.P. Liu et al. · Journal of Crystal Growth · 2004 · 36 citations
Engineering, Materials Engineering, Materials Science +14
45‐3: <i>Invited Paper:</i> Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing
Arthur Beckers, Dirk Fahle, C. Mauder et al. · SID Symposium Digest of Technical Papers · 2018 · 19 citations
Engineering, Materials Engineering, Materials Science +9
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
Conor Martin, M. Dauelsberg, H. Protzmann et al. · Journal of Crystal Growth · 2007 · 17 citations
Engineering, Materials Engineering, Materials Science +8
1–5 of 5