Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

High-power InGaN/GaN double-heterostructure violet light emitting diodes

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Engineering, Electrical Engineering, Materials Science +16

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

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High temperature adduct formation of trimethylgallium and ammonia

A. Thon, T. F. Kuech · Applied Physics Letters · 1996 · 154 citations

Natural Sciences, Chemistry, Materials Science +14

Nature of the parasitic chemistry during AlGaInN OMVPE

J. R. Creighton, George T. Wang, W.G. Breiland et al. · Journal of Crystal Growth · 2003 · 142 citations

Life Sciences, Chemistry, Microbiology +3

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

P. Fini, X. H. Wu, E. J. Tarsa et al. · Japanese Journal of Applied Physics · 1998 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +17