High-power InGaN/GaN double-heterostructure violet light emitting diodes

Abstract

InGaN/GaN double-heterostructure light-emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence (EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800 °C. The full widths at half maximum of EL were between 22 and 25 nm.