Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer - Concepedia

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Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

35

Citations

14

References

2004

Year

B.S. Zhang, Mei‐Lin Wu, J.P. Liu, J. Chen, J.J. Zhu, Xiaoming Shen, Guili Feng, Degang Zhao, Y.T. Wang, Hui Yang,

Journal of Crystal Growth

Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceTensile StressLow-temperature Aln Interlayer

References

	Year	Citations

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