J. Chen - Concepedia

Author

J. Chen

Institute of Semiconductors ORCID

Also Known As

George, S.Z., J. Chen, Jiajia Chen, Jintong Chen

Publications

915

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductors Chinese Academy of Sciences State Key Laboratory on Integrated Optoelectronics Sichuan University University of Chinese Academy of Sciences

About

J. Chen is an author at Institute of Semiconductors specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	337
2	Applied Physics	11	11	322
3	Materials Science	9	9	247
4	Materials Engineering	5	5	155
5	Natural Sciences	1	1	15

J. Chen

Publications

428

Citations

H-Index

Page 1

	Year	Citations
Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells J. C. Zhang, Desheng Jiang, Qian Sun, Applied Physics Letters Ii-vi SemiconductorPhotonicsPhotoluminescenceEdge DislocationsEngineering	2005	62
Cognitive Behavioral Therapy for Orthodontic Pain Control Jia Wang, Fengjiao Jian, J. Chen, Journal of Dental Research	2012	52
Strain evolution in GaN layers grown on high-temperature AlN interlayers Jiafu Wang, Duan Yao, J. Chen, Applied Physics Letters Materials EngineeringMaterials ScienceStrain EvolutionGan TemplateEngineering	2006	37
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer B.S. Zhang, Mei‐Lin Wu, J.P. Liu, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorEngineering	2004	35
Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer Qian Sun, Yong Huang, Hongmei Wang, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorAluminium NitrideEngineering	2005	34
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate J. Chen, Shuxiao Zhang, B.S. Zhang, Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsAluminum Gallium Nitride	2003	34
Low-temperature growth of InN by MOCVD and its characterization Yong Huang, Hongmei Wang, Qian Sun, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringLow-temperature GrowthCrystal Growth Technology	2004	34
Low‐intensity pulsed ultrasound induced enhanced adipogenesis of adipose‐derived stem cells Na Fu, Xingmei Yang, Kai Ba, Cell Proliferation	2013	27
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate Mengyuan Wu, B.S. Zhang, J. Chen, Journal of Crystal Growth Materials ScienceAluminium NitrideAln BufferGan Film GrownEngineering	2003	23
Effect of oxidation on the optical and surface properties of AlGaN Xiang‐Li Wang, Degang Zhao, J. Chen, Applied Surface Science Materials ScienceOptical MaterialsEngineeringOxidation ResistanceOptical Properties	2006	22

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