J.J. Zhu - Concepedia

Author

J.J. Zhu

State Key Laboratory on Integrated Optoelectronics ORCID

Also Known As

J J Zhu, J. J Zhu, J. J. Zhu, J.J Zhu, J.J. Zhu, Jiaduo Zhu, Jian-nan Zhu, Jiangpeng Zhu, Jieke Zhu, Jin-Quan Zhu

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics University of Chinese Academy of Sciences

About

J.J. Zhu is an author at State Key Laboratory on Integrated Optoelectronics specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	33	840
2	Applied Physics	16	30	708
3	Natural Sciences	2	2	25
4	Biostatistics	1	1	12
5	Chemical Engineering	1	1	108

J.J. Zhu

Publications

872

Citations

H-Index

Page 1

	Year	Citations
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition Degang Zhao, J.J. Zhu, Desheng Jiang, Journal of Crystal Growth Materials ScienceAluminium NitrideChemical EngineeringEngineeringCorrosion	2006	108
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green Lingqi Zhang, Desheng Jiang, J.J. Zhu, Journal of Applied Physics PhotonicsSolid-state LightingEngineeringAbsorption LossPhotoluminescence	2009	82
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films Jing Yang, Degang Zhao, Desheng Jiang, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringCompensation EffectCarbon Impurity	2014	48
Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells Wei Liu, Degang Zhao, Desheng Jiang, Optics Express Ingan/gan Multiple QuantumEngineeringTemperature DependenceLuminescence PropertyOptical Properties	2015	40
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots Shijie Xu, G. Q. Li, Yun-Jiang Wang, Applied Physics Letters Categoryquantum ElectronicsEngineeringOptoelectronic DevicesQuantum DissipationSemiconductor Nanostructures	2006	37
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer B.S. Zhang, Mei‐Lin Wu, J.P. Liu, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorEngineering	2004	35
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate J. Chen, Shuxiao Zhang, B.S. Zhang, Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsAluminum Gallium Nitride	2003	34
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness Jing Yang, Degang Zhao, Desheng Jiang, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringStructural CharacteristicsGan Cap LayerIndium Atoms	2015	32
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) J.J. Zhu, Yujie Fan, Gui-Ping Lu, Journal of Crystal Growth Materials EngineeringGan TemplateMaterials ScienceEngineeringSurface Science	2012	31
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1) B.S Zhang, Minhao Wu, Xinyu Shen, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2003	30

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