Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.8K citations

Engineering, Band Gap, Semiconductor Device +16

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 357 citations

Device Modeling, Electrical Engineering, Engineering +13

Interface traps and <i>P</i> <i>b</i> centers in oxidized (100) silicon wafers

G. J. Gerardi, Edward H. Poindexter, P. J. Caplan et al. · Applied Physics Letters · 1986 · 321 citations

Electrical Engineering, Silicon Wafers, Engineering +13

Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

Agnese Callegari, E. Cartier, M. Gribelyuk et al. · Journal of Applied Physics · 2001 · 265 citations

Optical Materials, Engineering, Hafnium Silicate +18

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

R. J. Carter, E. Cartier, A. Kerber et al. · Applied Physics Letters · 2003 · 118 citations

Materials Science, Interface State Passivation, Engineering +10