K. Cherkaoui

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Olof Engström, Bahman Raeissi, S. Hall et al. · Solid-State Electronics · 2007 · 131 citations

Electrical Engineering, Dielectrics, Engineering +14

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

Eileen O’Connor, Barry Brennan, Vladimir Djara et al. · Journal of Applied Physics · 2011 · 124 citations

Aluminium Nitride, Engineering, Conductance Method +21

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Scott Monaghan, Paul K. Hurley, K. Cherkaoui et al. · Solid-State Electronics · 2009 · 116 citations

Engineering, Electron Effective Mass, Electron Affinity +9

Insights into Multilevel Resistive Switching in Monolayer MoS₂

Shubhadeep Bhattacharjee, Enrico Caruso, Niall McEvoy et al. · ACS Applied Materials & Interfaces · 2020 · 97 citations

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Eileen O’Connor, Scott Monaghan, R. D. Long et al. · Applied Physics Letters · 2009 · 94 citations · Full text

Engineering, Atomic Layer, Interconnect (Integrated Circuits) +17