Vladimir Djara

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

Eileen O’Connor, Barry Brennan, Vladimir Djara et al. · Journal of Applied Physics · 2011 · 124 citations

Engineering, Materials Engineering, Materials Science +17

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

Lukas Czornomaz, Emanuele Uccelli, M. Sousa et al. · 2015 · 70 citations

Engineering, Electrical Engineering, Materials Engineering +17

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-<i>b</i>-PMMA Thin Film by <i>ex Situ</i> TEM Methods

Richard A. Farrell, Nikolay Petkov, Matthew T. Shaw et al. · Macromolecules · 2010 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly

Richard A. Farrell, Niall T. Kinahan, Stefan Hansel et al. · Nanoscale · 2012 · 60 citations

Engineering, Materials Engineering, Materials Science +17

Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells

Hassen Derouiche, Vladimir Djara · Solar Energy Materials and Solar Cells · 2007 · 57 citations

Engineering, Materials Engineering, Materials Science +16