Vladimir Djara

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

Eileen O’Connor, Barry Brennan, Vladimir Djara et al. · Journal of Applied Physics · 2011 · 124 citations

Aluminium Nitride, Engineering, Conductance Method +21

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

Lukas Czornomaz, Emanuele Uccelli, M. Sousa et al. · 2015 · 70 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-<i>b</i>-PMMA Thin Film by <i>ex Situ</i> TEM Methods

Richard A. Farrell, Nikolay Petkov, Matthew T. Shaw et al. · Macromolecules · 2010 · 65 citations

Engineering, Pmma Elimination, Nanostructured Polymer +16

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly

Richard A. Farrell, Niall T. Kinahan, Stefan Hansel et al. · Nanoscale · 2012 · 59 citations

Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Vladimir Djara, K. Cherkaoui, Michael Schmidt et al. · IEEE Transactions on Electron Devices · 2012 · 56 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +14