R. D. Long

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Eileen O’Connor, Scott Monaghan, R. D. Long et al. · Applied Physics Letters · 2009 · 94 citations · Full text

Engineering, Atomic Layer, Interconnect (Integrated Circuits) +17

Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, Christine M. Jackson, Jason Yang et al. · Applied Physics Letters · 2013 · 65 citations

Wide-bandgap Semiconductor, Oxide-semiconductor Interface, Near-interface Hydrogen +16

<i>In situ</i> H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

Eileen O’Connor, R. D. Long, K. Cherkaoui et al. · Applied Physics Letters · 2008 · 54 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +15

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

Paul K. Hurley, Éamon O’Connor, Vladimir Djara et al. · IEEE Transactions on Device and Materials Reliability · 2013 · 48 citations · Full text

Sub Xmlns, Engineering, Chemistry +18

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

R. D. Long, B. Shin, Scott Monaghan et al. · Journal of The Electrochemical Society · 2011 · 34 citations · Full text