Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Eileen O’Connor, Scott Monaghan, R. D. Long, +9

Applied Physics Letters

EngineeringAtomic LayerInterconnect (Integrated Circuits)Semiconductor DeviceSemiconductors +15

Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, Christine M. Jackson, Jason Yang, +8

Applied Physics Letters

Wide-bandgap SemiconductorOxide-semiconductor InterfaceNear-interface HydrogenEngineeringInterface Trap Evaluation +14

<i>In situ</i> H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

Eileen O’Connor, R. D. Long, K. Cherkaoui, +8

Applied Physics Letters

Oxide HeterostructuresSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects +13

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

Paul K. Hurley, Éamon O’Connor, Vladimir Djara, +10

IEEE Transactions on Device and Materials Reliability

Sub XmlnsEngineeringChemistryDefect ToleranceFixed Oxide Charges +16

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

R. D. Long, B. Shin, Scott Monaghan, +5

Journal of The Electrochemical Society

Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces

P. Casey, Eileen O’Connor, R. D. Long, +5

Microelectronic Engineering

Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsSurface Science +8

Oxide Charge Engineering of Atomic Layer Deposited AlO_<i>x</i>N_<i>y</i>/Al₂O₃ Gate Dielectrics: A Path to Enhancement Mode GaN Devices

Muhammad Adi Negara, Masaharu Kitano, R. D. Long, +1

ACS Applied Materials & Interfaces

Wide-bandgap SemiconductorAluminium NitrideEngineeringNitrogen IncorporationSemiconductors +17

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

R. D. Long, Eileen O’Connor, S. B. Newcomb, +9

Journal of Applied Physics

Hfo2 Thin FilmsEngineeringChemistryChemical DepositionChemical Engineering +15

Growth and characterisation of thin MgO layers on Si(100) surfaces

P. Casey, G. Hughes, Eileen O’Connor, +2

Journal of Physics Conference Series

EngineeringChemical DepositionElectron Beam EvaporationChemical EngineeringThin Mgo Layers +15

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

E. Miranda, J. Martín-Martínez, Eileen O’Connor, +7

Microelectronics Reliability

Electrical EngineeringEngineeringMetal Gate/mgo/inp StacksStress-induced Leakage CurrentBias Temperature Instability +7