Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

Abstract

This work focuses on the separation and quantification of fixed bulk oxide charge, fixed charge at the dielectric-semiconductor interface and interface state charge components in the Pt/Al2O3/In0.53Ga0.47As metal oxide semiconductor system. The availability of atomic layer deposited Al2O3 dielectrics over n and p type In0.53Ga0.47As with a range of thickness values opens up an experimental route for the determination of the interface state density (Dit) independently of the total fixed oxide charge using capacitance voltage measurements taken at 1MHz and -50 o C. Low temperature forming gas annealing significantly reduces the amount of fixed charge. The interface fixed charge at the interface is reduced from ~ -8.5x10 12 cm -2 pre anneal to ~ -7.4x10 11 cm -2 post anneal; the