Capture Kinetics of Electron Traps in MBE-Grown n-GaN

Abstract

The carrier capture kinetics of the Ec—0.59 eV and Ec—0.91 eV electron traps found in molecular beam epitaxy (MBE)-grown n-GaN have been determined by means of deep level transient spectroscopy (DLTS). The 0.59 eV trap does not show the behaviour of either ideal point defects or line defects. In contrast, the 0.91 eV trap displays the kinetics of linearly arranged interacting point defects, which generate a time-dependent local Coulombic potential with a characteristic time constant of ≈ 8.6 μs.