Concepedia

Investigation of aluminum film properties and microstructure for replacement metal gate application

Rao Huang, T.C. Tsai, Welch Lin, Huan-Chu Huang, Ming‐Shih Tsai, H. K. Hsu, Chia-Lin Hsu, J.F. Lin, C. L. Yang, J. Y. Wu

Microelectronic Engineering · 2013 · 10 citations · 9 references

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsDevice CharacterizationMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsThin Film Electrical PropertiesThin Film Surface MorphologyAluminium AlloysAluminum AlloysMetal Gate ElectrodesMetal Gate ScalingMetal Gates

References

9

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi et al. · 2007 · 829 citations

Engineering, Computer Engineering, Electrical Engineering +17

45nm High-k + metal gate strain-enhanced transistors

C. Auth, A. Cappellani, Jang‐Soo Chun et al. · 2008 · 204 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors

P. Packan, Sheikh A. Akbar, M Armstrong et al. · 2009 · 187 citations

Engineering, Computer Engineering, Electrical Engineering +12

Process development of high-k metal gate aluminum CMP at 28nm technology node

Yeh-Hsin Hsien, H. K. Hsu, T.C. Tsai et al. · Microelectronic Engineering · 2011 · 35 citations

Engineering, Electrical Engineering, Materials Science +16

Chemical mechanical polish: The enabling technology

Joseph M. Steigerwald · 2008 · 27 citations

Engineering, Electrical Engineering, Materials Science +16