T.C. Tsai

CMP process development for the via-middle 3D TSV applications at 28nm technology node

T.C. Tsai, W. C. Tsao, Welch Lin et al. · Microelectronic Engineering · 2011 · 54 citations

Technology Node, 3D Ic Architecture, Engineering +7

Process development of high-k metal gate aluminum CMP at 28nm technology node

Yeh-Hsin Hsien, H. K. Hsu, T.C. Tsai et al. · Microelectronic Engineering · 2011 · 34 citations

Materials Science, Technology Node, Electrical Engineering +9

Defect reduction of replacement metal gate aluminum chemical mechanical planarization at 28nm technology node

H. K. Hsu, T.C. Tsai, Chia Wei Hsu et al. · Microelectronic Engineering · 2013 · 15 citations

Technology Node, Electrical Engineering, Engineering +5

Effects of Cu surface roughness on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40nm technology node and beyond

Wen‐Chin Lin, Jack Lin, T.C. Tsai et al. · Microelectronic Engineering · 2011 · 13 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Advances on 32nm NiPt Salicide process

Yiwei Chen, Nien-Ting Ho, Jerander Lai et al. · 2009 · 12 citations

Materials Engineering, Resistance Uniformity, Electrical Engineering +10