Advances on 32nm NiPt Salicide process

Abstract

The two steps RTP program for 32 nm NiPt silicide formation process has been evaluated to improve source-drain resistance (Rsd), resistance uniformity and device leakage reduction behavior. A lower RTP-1 process has been investigated over the Nickel rich silicide phase formation and physical defect reduction. A higher millisecond anneal (MSA) RTP-2 has been investigated of its process window on Nickel monosilicide formation without Nickel silicide agglomeration and additional nickel piping. Then the optimized RTP program which combines a lower RTP-1 and higher RTP-2 by MSA has been demonstrated effective reduction of Nickel piping by e-beam inspection count, improved source to drain resistance (Rsd) and CMOS drive current (Ion/Ioff) improvement 4% on NMOSFET and 3% on PMOSFET, respectively.