Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)

Unified defect model and beyond

W. E. Spicer, I. Lindau, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1980 · 646 citations

Natural Sciences, Materials Science, Physics +17

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang et al. · Applied Physics Letters · 2005 · 331 citations

Engineering, Materials Engineering, Materials Science +17

Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, G. D. Wilk, D. Starodub et al. · Applied Physics Letters · 2005 · 313 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye, G. D. Wilk, Bingzheng Yang et al. · Applied Physics Letters · 2003 · 306 citations

Engineering, Electrical Engineering, Materials Science +17

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

Yi Xuan, Yanqing Wu, H. C. Lin et al. · IEEE Electron Device Letters · 2007 · 191 citations

Engineering, Electrical Engineering, Materials Science +17