Marc Meuris

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Koen Martens, Chi On Chui, Guy Brammertz et al. · IEEE Transactions on Electron Devices · 2008 · 361 citations

Electrical Engineering, Mos Devices, Engineering +12

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Annelies Delabie, Florence Bellenger, Michel Houssa et al. · Applied Physics Letters · 2007 · 270 citations

Engineering, Proper Passivation, Al2o3 Ald +21

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 263 citations

Materials Science, Dislocation Densities, Electrical Engineering +11

Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells

Guy Brammertz, Marie Buffière, Souhaib Oueslati et al. · Applied Physics Letters · 2013 · 215 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +12

Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

A. Satta, Eddy Simoen, Trudo Clarysse et al. · Applied Physics Letters · 2005 · 137 citations

Materials Science, Crystalline Germanium, Boron Nitride +8