Heterojunction Interfaces

Heterojunction Interfaces is a semiconductor interface formed between two different semiconductor materials with distinct bandgap energies, enabling the spatial separation of charge carriers across the junction due to differences in electronic band structure.

1.4K

Publications

78.5K

Citations

6.7K

Authors

1.3K

Institutions

Publications per year

2017–2026

549

Authors

6.7K

  1. RW
    R. W. Grant

    Rockwell Automation (United States), United States

    18 publications · 3.1K citations

    16

    h-index

  2. GM
    G. Margaritondo

    École Polytechnique Fédérale de Lausanne, Switzerland

    22 publications · 585 citations

    15

    h-index

  3. JR
    J. R. Waldrop

    Rockwell Automation (United States), United States

    14 publications · 3K citations

    13

    h-index

  4. EA
    E. A. Kraut

    Rockwell Automation (United States), United States

    11 publications · 2.6K citations

    10

    h-index

  5. AF
    A. Franciosi

    University of Minnesota, United States

    10 publications · 477 citations

    10

    h-index

1–5 of 6.7K

Venues

  1. Applied Physics Letters

    146 publications · 7.9K citations

    45

    h-index

  2. Physical review. B, Condensed matter

    PRB · 54 publications · 6K citations

    31

    h-index

  3. Journal of Applied Physics

    66 publications · 2.6K citations

    29

    h-index

  4. Applied Surface Science

    62 publications · 1.7K citations

    24

    h-index

  5. Surface Science

    34 publications · 1.7K citations

    21

    h-index

1–5