Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Heavy doping effects in Mg-doped GaN

P. Kozodoy, Huili Grace Xing, Steven P. DenBaars et al. · Journal of Applied Physics · 2000 · 414 citations

Engineering, Materials Engineering, Materials Science +17

Structure of GaN(0001): The laterally contracted Ga bilayer model

John E. Northrup, Jörg Neugebauer, R. M. Feenstra et al. · Physical review. B, Condensed matter · 2000 · 352 citations · Full text

Natural Sciences, Materials Science, Physics +16

Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, Wendy L. Sarney et al. · Applied Physics Letters · 1999 · 205 citations

Engineering, Materials Engineering, Materials Science +12

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

B. Heying, I. P. Smorchkova, C. Poblenz et al. · Applied Physics Letters · 2000 · 196 citations

Natural Sciences, Materials Science, Physics +17

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Christoph Adelmann, J. Brault, D. Jalabert et al. · Journal of Applied Physics · 2002 · 183 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17