A. Feduniewicz

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz et al. · Applied Physics Letters · 2004 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, P. Perlin, I. Grzegory et al. · Semiconductor Science and Technology · 2005 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz et al. · physica status solidi (a) · 2004 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

A. Feduniewicz, C. Skierbiszewski, M. Siekacz et al. · Journal of Crystal Growth · 2005 · 30 citations

Engineering, Materials Science, Physics +14

Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction

H. Teisseyre, C. Skierbiszewski, B. Łucznik et al. · Applied Physics Letters · 2005 · 29 citations

Engineering, Materials Engineering, Materials Science +17