Journal of Applied Physics · 2002 · 183 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthPlasma-surface InteractionsSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsWide-bandgap SemiconductorsEpitaxial Growth KineticsGrowth KineticsMolecular Beam EpitaxyReflection High-energy Electron DiffractionSubstrate Temperature EffectsSurface CoverageSurface Coverage AnalysisSurface Growth
The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
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