Acoustic phonon broadening mechanism in single quantum dot emission

L. Besombes, K. Kheng, Lluı́s F. Marsal, +1

Physical review. B, Condensed matter

Quantum SciencePhotonicsExciton-acoustic-phonon CouplingEngineeringPolariton Dynamic +11

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Christoph Adelmann, J. Brault, D. Jalabert, +4

Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringGa FluxEngineeringGa Surface Coverage +9

Valence-band mixing in neutral, charged, and Mn-doped self-assembled quantum dots

Yoan Léger, L. Besombes, L. Maingault, +1

Physical Review B

EngineeringMagnetic ResonanceColloidal NanocrystalsSpintronic MaterialSpin Phenomenon +17

Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

Julia Simon, N. T. Pelekanos, Christoph Adelmann, +5

Physical review. B, Condensed matter

Materials SciencePl Decay TimePl EnergyRecombination DynamicsPhysics +12

Electrical Control of a Single Mn Atom in a Quantum Dot

Yoan Léger, L. Besombes, J. Fernández‐Rossier, +2

Physical Review Letters

Quantum ScienceSpintronicsIndividual Quantum DotEngineeringQuantum Computing +13

Optical Spin Orientation of a Single Manganese Atom in a Semiconductor Quantum Dot Using Quasiresonant Photoexcitation

Claire Le Gall, L. Besombes, H. Boukari, +3

Physical Review Letters

II–VI quantum dot formation induced by surface energy change of a strained layer

F. Tinjod, B. Gilles, S. Moehl, +2

Applied Physics Letters

EngineeringColloidal NanocrystalsSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor +18

Electronic structure, magnetic ordering, and optical properties of GaN and GaAs doped with Mn

E. Kulatov, Hiroshi Nakayama, H. Mariette, +2

Physical review. B, Condensed matter

Wide-bandgap SemiconductorMagnetic PropertiesEngineeringMagnetic OrderingElectronic Structure +19

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Eirini Sarigiannidou, F. Wilhelm, E. Monroy, +6

Physical Review B

Materials ScienceMagnetismFerromagnetismMagnetic PropertiesEngineering +12

Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

M. Arléry, Jean‐Luc Rouvière, F. Widmann, +3

Applied Physics Letters

Materials ScienceSemiconductorsAluminium NitrideWide-bandgap SemiconductorEngineering +13