B. Daudin - Concepedia

Author

B. Daudin

Commissariat à l'Énergie Atomique et aux Énergies Alternatives ORCID

Also Known As

B Daudin, B. Daudin, B. Daudin., Bruno DAUDIN, Bruno Daudin, Daudin Bruno, Daudin, B., Daudin, Bruno

413

Publications

9.2K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Centre National de la Recherche Scientifique Université Grenoble Alpes Université Joseph Fourier

About

B. Daudin is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	50	160	7.7K
2	Applied Physics	50	159	7.6K
3	Natural Sciences	5	5	138
4	Chemical Engineering	2	2	128
5	Language Studies	1	1	12

B. Daudin

178

Publications

8.3K

Citations

H-Index

Page 1

	Year	Citations
Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN B. Daudin, F. Widmann, G. Feuillet, Physical review. B, Condensed matter Materials ScienceStranski-krastanov Growth ModeHexagonal GanAluminium NitrideEngineering	1997	381
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect F. Widmann, Julia Simon, B. Daudin, Physical review. B, Condensed matter Materials SciencePhotoluminescenceEngineeringPhysicsPiezoelectric Effects	1998	285
Growth kinetics and optical properties of self-organized GaN quantum dots F. Widmann, B. Daudin, G. Feuillet, Journal of Applied Physics Aluminium NitrideEngineeringSelf-organized Gan IslandsGrowth KineticsSemiconductor Nanostructures	1998	230
From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer R. Songmuang, O. Landré, B. Daudin Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	2007	214
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN Christoph Adelmann, J. Brault, D. Jalabert, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringGa FluxEngineeringGa Surface Coverage	2002	183
Polarity determination of GaN films by ion channeling and convergent beam electron diffraction B. Daudin, Jean‐Luc Rouvière, M. Arléry Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsOptical Properties	1996	180
Thermodynamic properties of the gadolinium gallium garnet, Gd3Ga5O12, between 0.05 and 25 K B. Daudin, R. Lagnier, B. Salce Journal of Magnetism and Magnetic Materials Materials ScienceRare Earth MineralEngineeringApplied PhysicsCondensed Matter Physics	1982	165
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots Julia Simon, N. T. Pelekanos, Christoph Adelmann, Physical review. B, Condensed matter Materials SciencePl Decay TimePl EnergyRecombination DynamicsPhysics	2003	163
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy Christoph Adelmann, Julia Simon, G. Feuillet, Applied Physics Letters Atomic Force MicroscopyEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2000	161
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant F. Widmann, B. Daudin, G. Feuillet, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringPhysics	1998	158

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